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TSM085NB03CV-RGG

TSM085NB03CV-RGG

TSM085NB03CV-RGG

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零件编号 TSM085NB03CV-RGG
制造商 Taiwan Semiconductor Corporation
描述 30V, 58A, SINGLE N-CHANNEL POWER
数据表
封装 -
ECAD
库存 30,000 piece(s)
单价 Request a Quote
交货时间 待确认
预计送达时间 十一月 16 - 十一月 21 (选择速递服务)
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TSM085NB03CV-RGG参数

制造商Taiwan Semiconductor Corporation
类别分立半导体产品 - 晶体管 - FET,MOSFET - 单
封装-
ECAD
系列-
FET类型N-Channel
技术MOSFET (Metal Oxide)
漏极到源极电压(Vdss)30 V
电流 - 连续漏极(Id)@ 25°C11A (Ta), 58A (Tc)
驱动电压(Max Rds On,Min Rds On)4.5V, 10V
Vgs(th)(Max)@Id2.5V @ 250µA
栅极电荷(Qg)(最大值)@Vgs20 nC @ 10 V
输入电容(Ciss)(最大值)@ Vds1101 pF @ 15 V
Vgs(最大)±20V
FET功能-
功耗(最大值)1.92W (Ta), 52W (Tc)
Rds On(Max)@ Id,Vgs8.5mOhm @ 11A, 10V
工作温度-55°C ~ 150°C (TJ)
安装类型Surface Mount
供应商设备包8-PDFN (3.15x3.1)
包/箱8-PowerWDFN

TSM085NB03CV-RGG Packaging

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TSM085NB03CV-RGG FAQ

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    (2)We are informed of the defect described above within 90 days after the delivery of TSM085NB03CV-RGG.
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TSM085NB03CV-RGG

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